solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number/ordering information 1 / sdr1 _ _ _ _ _ _ screening 2 / __ = not screened tx = tx level txv = txv s = s level package type _ _ = axial leaded family d = 200v k = 800v g = 400v m = 1000v j = 600v n = 1200v sdr1d thru sdr1n 1.0 amps 200 1200 volts 50 ? 80 nsec ultra fast rectifier features: ? ultra fast recovery: 50-80 ns max @ 25oc 4 / 80-130 ns max @ 100oc 4 / ? single chip construction ? piv to 1200 volts ? low reverse leakage current ? hermetically sealed ? for high efficiency applications ? metallurgically bonded ? tx, txv, and s-level screening available 2 / ? available in surface mount (sm) and square tab surface mount (sms) versions (ref. ru0003) ? hyper fast version available (ref. rh0119) maximum ratings 3 / rating symbol value unit peak repetitive reverse voltage and dc blocking voltage sdr1d sdr1g sdr1j sdr1k sdr1m sdr1n v rrm v rwm v r 200 400 600 800 1000 1200 volts rectified forward forward current (resistive load, 60 hz, sine wave, t a = 25oc) i o 1 amp peak surge current (8.3 msec pulse, half sine wave superimposed on io, allow junction to reach equilibrium between pulses, t a = 25oc) i fsm 25 amps operating & storage temperatur e t op and t stg -65 to +175 oc thermal resistance, junction to lead, l = 3/8? r jl 45 oc/ w notes: 1 / for ordering information, price, and availability- contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / unless otherwise specified, all electrical characteristics @25oc. 4 / recovery conditions: i f = 0.5 amp, i r = 1.0 amp, i rr to .25 amp. 5 / for information on operating curves, contact factory. axial leaded note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: RU0005H doc
electrical characteristics 3 / characteristics symbol value unit instantaneous forward voltage drop (i f = 1adc, 300- 500 s pulse, t a = 25oc) sdr1d thru sdr1j sdr1k thru sdr1n v f1 1.70 1.90 vdc instantaneous forward voltage drop (i f = 1adc, 300- 500 s pulse, t a = -55oc) sdr1d thru sdr1j sdr1k thru sdr1n v f2 2.10 2.30 vdc maximum reverse leakage current (rated v r , 300 s pulse minimum , t a = 25oc) i r1 5 a maximum reverse leakage current (rated v r , 300 s pulse minimum , t a = 100oc) i r2 500 a junction capacitance (v r = 10vdc, t a = 25oc , f = 1mhz) c j 24 pf maximum reverse recovery time 4 / sdr1d thru sdr1 j sdr1k sdr1m sdr1n t rr 50 60 70 80 ns axial leaded case outline 5 / : dimensions dim. min. max. a --- .150? b --- .190? c .027? .033? d .95? --- solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sdr1d thru sdr1n note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: RU0005H doc
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